PROBLEM
Tunneling field effect transistors are promising candidates for next generation nanodevices but they have issues. The current transistor technology has too low ON current densities or suppressed OFF current densities. Current tunneling field effect transistors also switch due to band alignment.
SOLUTION
Purdue researchers have developed a new technology with large ON current and low OFF current. It also has a small subthreshold swing. This technology will also combine several switching mechanisms that simultaneously turn the transistor on or off.
IN THE MEDIA
Purdue University News Release
PRIMARY INVESTIGATOR
Tillmann Kubis, the Katherine Ngai Pesic & Silvaco Research Assistant Professor of Electrical and Computer Engineering, Elmore Family School of Electrical and Computer Engineering, College of Engineering
INNOVATION DISCLOSURE
Cascade Tunneling Field Effect Transistor: 2018-KUBI-68145
LICENSING CONTACTS
Phone: (765) 588-3475
Fax: (765) 463-3486
Email: otcip@prf.org
Email: sgmartin@prf.org
ABSTRACT
Cascade Tunneling Field Effect Transistor
Kubis, Tillmann C (Project Leader), Sarangapani, Prasad
Tunneling field effect transistors are promising candidates for next generation nanodevices. They can offer better switching behavior compared to traditional field effect transistors. Some issues with the current transistor technology is it has too low ON current densities or suppressed OFF current densities. Another issue with current tunneling field effect transistors is they are switch due to band alignment. There is a need for a new technology that can fix these issues with the current tunneling field effect transistors.
Researchers at Purdue University have developed a new technology for tunneling field effect transistors. This technology will help the manufacturers of integrated circuits who want to build smaller and more transistors per unit area. This technology will do this because it is a new design concept with large ON current and low OFF current. It also has a small subthreshold swing. This technology will also combine several different switching mechanisms that simultaneously turn the transistor on or off. This new technology will open the door for tunneling field effect transistors for the future.